中国物理B ›› 2016, Vol. 25 ›› Issue (8): 88102-088102.doi: 10.1088/1674-1056/25/8/088102

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Preparation of patterned boron nanowire films with different widths of unit-cell and their field emission properties

Yong-Xin Zhang(张永欣), Fei Liu(刘飞), Cheng-Min Shen(申承民), Jun Li(李军), Shao-Zhi Deng(邓少芝), Ning-Sheng Xu(许宁生), Hong-Jun Gao(高鸿钧)   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China
  • 收稿日期:2016-02-05 修回日期:2016-05-05 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Cheng-Min Shen, Hong-Jun Gao E-mail:cmshen@iphy.ac.cn;hjgao@iphy.ac.cn
  • 基金资助:

    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Fund from the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

Preparation of patterned boron nanowire films with different widths of unit-cell and their field emission properties

Yong-Xin Zhang(张永欣)1, Fei Liu(刘飞)2, Cheng-Min Shen(申承民)1, Jun Li(李军)1, Shao-Zhi Deng(邓少芝)2, Ning-Sheng Xu(许宁生)2, Hong-Jun Gao(高鸿钧)1   

  1. 1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
    2 State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Microelectronics, Sun Yat-sen University, Guangzhou 510275, China
  • Received:2016-02-05 Revised:2016-05-05 Online:2016-08-05 Published:2016-08-05
  • Contact: Cheng-Min Shen, Hong-Jun Gao E-mail:cmshen@iphy.ac.cn;hjgao@iphy.ac.cn
  • Supported by:

    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB933604), the National Natural Science Foundation of China (Grant No. 51572290), and the Fund from the Chinese Academy of Sciences (Grant Nos. 1731300500015 and XDB07030100).

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摘要：

Large-area patterned films of boron nanowires (BNWs) are fabricated at various densities by chemical vapor deposition (CVD). Different widths of unit-cell of Mo masks are used as templates. The widths of unit-cell of Mo masks are 100 μm, 150 μm, and 200 μm, respectively. The distance between unit cells is 50 μm. The BNWs have an average diameter of about 20 nm and lengths of 10 μm-20 μm. High-resolution transmission electron microscopy analysis shows that each nanowire has a β-tetragonal structure with good crystallization. Field emission measurements of the BNW films show that their turn-on electric fields decrease with width of unit-cell increasing.

关键词: patterned boron nanowires, different width of unit-cell, field emission properties

Abstract:

Large-area patterned films of boron nanowires (BNWs) are fabricated at various densities by chemical vapor deposition (CVD). Different widths of unit-cell of Mo masks are used as templates. The widths of unit-cell of Mo masks are 100 μm, 150 μm, and 200 μm, respectively. The distance between unit cells is 50 μm. The BNWs have an average diameter of about 20 nm and lengths of 10 μm-20 μm. High-resolution transmission electron microscopy analysis shows that each nanowire has a β-tetragonal structure with good crystallization. Field emission measurements of the BNW films show that their turn-on electric fields decrease with width of unit-cell increasing.

Key words: patterned boron nanowires, different width of unit-cell, field emission properties

中图分类号:  (Nanowires)

  • 81.07.Gf
79.70.+q (Field emission, ionization, evaporation, and desorption) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))