中国物理B ›› 2016, Vol. 25 ›› Issue (7): 70503-070503.doi: 10.1088/1674-1056/25/7/070503
Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
Yu Zhang(张钰), Xinmiao Lu(逯鑫淼), Guangyi Wang(王光义), Yongcai Hu(胡永才), Jiangtao Xu(徐江涛)
- 1 Key Laboratory for RF Circuits and Systems (Hangzhou Dianzi University), Ministry of Education, Hangzhou 310018, China;
2 Institute of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
3 School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution
Yu Zhang(张钰)1,2, Xinmiao Lu(逯鑫淼)2, Guangyi Wang(王光义)1,2, Yongcai Hu(胡永才)2, Jiangtao Xu(徐江涛)3
- 1 Key Laboratory for RF Circuits and Systems (Hangzhou Dianzi University), Ministry of Education, Hangzhou 310018, China;
2 Institute of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China;
3 School of Electronics and Information Engineering, Tianjin University, Tianjin 300072, China
摘要： The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result, the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated, and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.
中图分类号: (Noise)
- 05.40.Ca