中国物理B ›› 2016, Vol. 25 ›› Issue (4): 49401-049401.doi: 10.1088/1674-1056/25/4/049401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇    

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

Jun-Ting Yu(于俊庭), Shu-Ming Chen(陈书明), Jian-Jun Chen(陈建军), Peng-Cheng Huang(黄鹏程), Rui-Qiang Song(宋睿强)   

  1. 1 College of Computer, National University of Defense Technology, Changsha 410073, China;
    2 National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2015-09-06 修回日期:2015-10-25 出版日期:2016-04-05 发布日期:2016-04-05
  • 通讯作者: Shu-Ming Chen E-mail:smchen_cs@163.com
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030).

Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

Jun-Ting Yu(于俊庭)1, Shu-Ming Chen(陈书明)1,2, Jian-Jun Chen(陈建军)1, Peng-Cheng Huang(黄鹏程)1, Rui-Qiang Song(宋睿强)1   

  1. 1 College of Computer, National University of Defense Technology, Changsha 410073, China;
    2 National Laboratory for Parallel and Distributed Processing, National University of Defense Technology, Changsha 410073, China
  • Received:2015-09-06 Revised:2015-10-25 Online:2016-04-05 Published:2016-04-05
  • Contact: Shu-Ming Chen E-mail:smchen_cs@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 61376109, 61434007, and 61176030).

摘要: Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications.

关键词: body-biasing, SET pulse quenching, charge sharing, bulk FinFET process

Abstract: Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications.

Key words: body-biasing, SET pulse quenching, charge sharing, bulk FinFET process

中图分类号:  (Radiation processes)

  • 94.05.Dd
85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)