中国物理B ›› 2016, Vol. 25 ›› Issue (4): 47503-047503.doi: 10.1088/1674-1056/25/4/047503
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Miao-Ling Zhang(张苗玲), Jun Ye(叶军), Rui Liu(刘锐), Shu Mi(米菽), Yong Xie(谢勇), Hao-Liang Liu(刘郝亮), Chris Van Haesendonck, Zi-Yu Chen(陈子瑜)
Miao-Ling Zhang(张苗玲)1, Jun Ye(叶军)1, Rui Liu(刘锐)1, Shu Mi(米菽)1, Yong Xie(谢勇)1, Hao-Liang Liu(刘郝亮)2, Chris Van Haesendonck2, Zi-Yu Chen(陈子瑜)1
摘要: The magnetization reversal process of Fe/MgO (001) thin film is investigated by combining transverse and longitudinal hysteresis loops. Owing to the competition between domain wall pinning energy and weak uniaxial magnetic anisotropy,the typical magnetization reversal process of Fe ultrathin film can take place via either an “l-jump” process near the easy axis, or a “2-jump” process near the hard axis, depending on the applied field orientation. Besides, the hysteresis loop presents strong asymmetry resulting from the variation of the detected light intensity due to the quadratic magneto-optic effect. Furthermore, we modify the detectable light intensity formula and simulate the hysteresis loops of the Kerr signal. The results show that they are in good agreement with the experimental data.
中图分类号: (Magnetization reversal mechanisms)