Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

doi:10.1088/1674-1056/25/4/047302

中国物理B ›› 2016, Vol. 25 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/25/4/047302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

Wei-Min Zheng(郑卫民), Su-Mei Li(李素梅), Wei-Yan Cong(丛伟艳), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北)

1 School of Space Science and Physics, Shandong University, Weihai 264209, China;
2 School of Information Engineering, Shandong University, Weihai 264209, China;
3 Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
4 School of Chemistry, the University of Melbourne, Victoria 3010, Australia

收稿日期:2015-10-31 修回日期:2015-12-30 出版日期:2016-04-05 发布日期:2016-04-05
通讯作者: Wei-Min Zheng E-mail:wmzheng@sdu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61178039) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012FM028).

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

Wei-Min Zheng(郑卫民)¹, Su-Mei Li(李素梅)², Wei-Yan Cong(丛伟艳)¹, Ai-Fang Wang(王爱芳)¹, Bin Li(李斌)³, Hai-Bei Huang(黄海北)⁴

1 School of Space Science and Physics, Shandong University, Weihai 264209, China;
2 School of Information Engineering, Shandong University, Weihai 264209, China;
3 Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
4 School of Chemistry, the University of Melbourne, Victoria 3010, Australia

Received:2015-10-31 Revised:2015-12-30 Online:2016-04-05 Published:2016-04-05
Contact: Wei-Min Zheng E-mail:wmzheng@sdu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61178039) and the Natural Science Foundation of Shandong Province, China (Grant No. ZR2012FM028).

摘要/Abstract

摘要： A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two-and three-dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy-and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.

关键词: GaAs/GaAlAs mulitiple quantum wells, heavy-and light-hole excitons, photoluminescence spectra, variational calculation

Abstract: A series of GaAs/AlAs multiple-quantum wells doped with Be is grown by molecular beam epitaxy. The photoluminescence spectra are measured at 4, 20, 40, 80, 120, and 200 K, respectively. The recombination transition emission of heavy-hole and light-hole free excitons is clearly observed and the transition energies are measured with different quantum well widths. In addition, a theoretical model of excitonic states in the quantum wells is used, in which the symmetry of the component of the exciton wave function representing the relative motion is allowed to vary between the two-and three-dimensional limits. Then, within the effective mass and envelope function approximation, the recombination transition energies of the heavy-and light-hole excitons in GaAs/AlAs multiple-quantum wells are calculated each as a function of quantum well width by the shooting method and variational principle with two variational parameters. The results show that the excitons are neither 2D nor 3D like, but are in between in character and that the theoretical calculation is in good agreement with the experimental results.

Key words: GaAs/GaAlAs mulitiple quantum wells, heavy-and light-hole excitons, photoluminescence spectra, variational calculation

中图分类号: (Quantum wells)

73.21.Fg

71.35.-y (Excitons and related phenomena) 71.55.Eq (III-V semiconductors)

郑卫民, 李素梅, 丛伟艳, 王爱芳, 李斌, 黄海北. Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well[J]. 中国物理B, 2016, 25(4): 47302-047302.

Wei-Min Zheng(郑卫民), Su-Mei Li(李素梅), Wei-Yan Cong(丛伟艳), Ai-Fang Wang(王爱芳), Bin Li(李斌), Hai-Bei Huang(黄海北). Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well[J]. Chin. Phys. B, 2016, 25(4): 47302-047302.

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Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

Excitonic transitions in Be-doped GaAs/AlAs multiple quantum well

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