Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

doi:10.1088/1674-1056/24/12/124207

中国物理B ›› 2015, Vol. 24 ›› Issue (12): 124207-124207.doi: 10.1088/1674-1056/24/12/124207

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

吕海燕^a, 牟奇^a, 张磊^a, 吕元杰^b, 冀子武^a, 冯志红^b, 徐现刚^c, 郭其新^d

a School of Physics, Shandong University, Jinan 250100, China;
b National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
c Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;
d Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan

收稿日期:2015-05-22 修回日期:2015-07-07 出版日期:2015-12-05 发布日期:2015-12-05
通讯作者: Ji Zi-Wu, Guo Qi-Xin E-mail:jiziwu@sdu.edu.cn;guoq@cc.saga-u.ac.jp
基金资助:
Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Lü Hai-Yan (吕海燕)^a, Mu Qi (牟奇)^a, Zhang Lei (张磊)^a, Lü Yuan-Jie (吕元杰)^b, Ji Zi-Wu (冀子武)^a, Feng Zhi-Hong (冯志红)^b, Xu Xian-Gang (徐现刚)^c, Guo Qi-Xin (郭其新)^d

a School of Physics, Shandong University, Jinan 250100, China;
b National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
c Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University, Jinan 250100, China;
d Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502, Japan

Received:2015-05-22 Revised:2015-07-07 Online:2015-12-05 Published:2015-12-05
Contact: Ji Zi-Wu, Guo Qi-Xin E-mail:jiziwu@sdu.edu.cn;guoq@cc.saga-u.ac.jp
Supported by:
Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

摘要/Abstract

摘要： Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.

关键词: photoluminescence, ZnTe bulk crystal, ZnTe epilayer, defect or impurity-related emissions

Abstract: Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.

Key words: photoluminescence, ZnTe bulk crystal, ZnTe epilayer, defect or impurity-related emissions

中图分类号: (Optical materials)

42.70.-a

61.50.-f (Structure of bulk crystals) 68.55.-a (Thin film structure and morphology) 61.72.-y (Defects and impurities in crystals; microstructure)

吕海燕, 牟奇, 张磊, 吕元杰, 冀子武, 冯志红, 徐现刚, 郭其新. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE[J]. 中国物理B, 2015, 24(12): 124207-124207.

Lü Hai-Yan (吕海燕), Mu Qi (牟奇), Zhang Lei (张磊), Lü Yuan-Jie (吕元杰), Ji Zi-Wu (冀子武), Feng Zhi-Hong (冯志红), Xu Xian-Gang (徐现刚), Guo Qi-Xin (郭其新). Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE[J]. Chin. Phys. B, 2015, 24(12): 124207-124207.

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Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

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