中国物理B ›› 2015, Vol. 24 ›› Issue (11): 117802-117802.doi: 10.1088/1674-1056/24/11/117802

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Design of broad angular phase retarders for the complete polarization analysis of extreme ultraviolet radiation

林承友a, 陈淑静b, 陈朝阳a, 丁迎春a   

  1. a College of Science, Beijing University of Chemical Technology, Beijing 100029, China;
    b Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China
  • 收稿日期:2015-03-24 修回日期:2015-06-12 出版日期:2015-11-05 发布日期:2015-11-05
  • 通讯作者: Lin Cheng-You E-mail:cylin@mail.buct.edu.cn
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant Nos. JD1517, ZY1349, and 2652014012).

Design of broad angular phase retarders for the complete polarization analysis of extreme ultraviolet radiation

Lin Cheng-You (林承友)a, Chen Shu-Jing (陈淑静)b, Chen Zhao-Yang (陈朝阳)a, Ding Ying-Chun (丁迎春)a   

  1. a College of Science, Beijing University of Chemical Technology, Beijing 100029, China;
    b Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, School of Materials Science and Technology, China University of Geosciences, Beijing 100083, China
  • Received:2015-03-24 Revised:2015-06-12 Online:2015-11-05 Published:2015-11-05
  • Contact: Lin Cheng-You E-mail:cylin@mail.buct.edu.cn
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant Nos. JD1517, ZY1349, and 2652014012).

摘要: A method of designing broad angular phase retarders in the extreme ultraviolet (EUV) region is presented. The design is based on a standard Levenberg-Marquardt algorithm combined with a common merit function. Using this method, a series of broad angular EUV phase retarders were designed using aperiodic Mo/Si multilayers. At photon energy of 90 eV, broad angular phase retarders with 30°, 60°, and 90° phase retardations have been realized in the angular range of 39°-51°. By analyzing and comparing the performances of the designed broad angular phase retarders, we found that the Mo/Si multilayer with more layers could obtain higher phase retardation in broader angular range when used to design the broad angular phase retarder. Broad angular phase retarders possess lower sensitivity toward changing incident angle compared with the traditional phase retarders designed with transmission periodic multilayers, and can be used for the polarization control of broad angular EUV sources.

关键词: broad angular phase retarders, extreme ultraviolet radiation, polarization analysis

Abstract: A method of designing broad angular phase retarders in the extreme ultraviolet (EUV) region is presented. The design is based on a standard Levenberg-Marquardt algorithm combined with a common merit function. Using this method, a series of broad angular EUV phase retarders were designed using aperiodic Mo/Si multilayers. At photon energy of 90 eV, broad angular phase retarders with 30°, 60°, and 90° phase retardations have been realized in the angular range of 39°-51°. By analyzing and comparing the performances of the designed broad angular phase retarders, we found that the Mo/Si multilayer with more layers could obtain higher phase retardation in broader angular range when used to design the broad angular phase retarder. Broad angular phase retarders possess lower sensitivity toward changing incident angle compared with the traditional phase retarders designed with transmission periodic multilayers, and can be used for the polarization control of broad angular EUV sources.

Key words: broad angular phase retarders, extreme ultraviolet radiation, polarization analysis

中图分类号:  (Multilayers; superlattices; photonic structures; metamaterials)

  • 78.67.Pt
41.50.+h (X-ray beams and x-ray optics) 42.79.-e (Optical elements, devices, and systems)