中国物理B ›› 2015, Vol. 24 ›› Issue (9): 98701-098701.doi: 10.1088/1674-1056/24/9/098701

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

High-power TM01 millimeter wave pulse sensor in circular waveguide

王光强a b, 朱湘琴a, 陈再高a, 王雪锋a b, 张黎军a b   

  1. a Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    b Science and Technology on High Power Microwave Laboratory, Xi'an 710024, China
  • 收稿日期:2015-01-31 修回日期:2015-04-04 出版日期:2015-09-05 发布日期:2015-09-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61231003).

High-power TM01 millimeter wave pulse sensor in circular waveguide

Wang Guang-Qiang (王光强)a b, Zhu Xiang-Qin (朱湘琴)a, Chen Zai-Gao (陈再高)a, Wang Xue-Feng (王雪锋)a b, Zhang Li-Jun (张黎军)a b   

  1. a Northwest Institute of Nuclear Technology, Xi'an 710024, China;
    b Science and Technology on High Power Microwave Laboratory, Xi'an 710024, China
  • Received:2015-01-31 Revised:2015-04-04 Online:2015-09-05 Published:2015-09-05
  • Contact: Wang Guang-Qiang E-mail:wangguangqiang@nint.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61231003).

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摘要： By investigating the interaction of an n-type silicon sample with the TM01 mode millimeter wave in a circular waveguide, a viable high-power TM01 millimeter wave sensor is proposed. Based on the hot electron effect, the silicon sample serving as a sensing element (SE) and appropriately mounted on the inner wall of the circular waveguide is devoted to the on-line measurement of a high-power millimeter wave pulse. A three-dimensional parallel finite-difference time-domain method is applied to simulate the wave propagation within the measuring structure. The transverse electric field distribution, the dependences of the frequency response of the voltage standing-wave ratio (VSWR) in the circular waveguide, and the average electric field amplitude within the SE on the electrophysical parameters of the SE are calculated and analyzed in the frequency range of 300-400 GHz. As a result, the optimal dimensions and specific resistance of the SE are obtained, which provide a VSWR of no more than 2.0, a relative sensitivity around 0.0046 kW-1 fluctuating within ± 17.3%, and a maximum enduring power of about 4.3 MW.

关键词: circular waveguide, high-power millimeter wave, on-line measurement

Abstract: By investigating the interaction of an n-type silicon sample with the TM01 mode millimeter wave in a circular waveguide, a viable high-power TM01 millimeter wave sensor is proposed. Based on the hot electron effect, the silicon sample serving as a sensing element (SE) and appropriately mounted on the inner wall of the circular waveguide is devoted to the on-line measurement of a high-power millimeter wave pulse. A three-dimensional parallel finite-difference time-domain method is applied to simulate the wave propagation within the measuring structure. The transverse electric field distribution, the dependences of the frequency response of the voltage standing-wave ratio (VSWR) in the circular waveguide, and the average electric field amplitude within the SE on the electrophysical parameters of the SE are calculated and analyzed in the frequency range of 300-400 GHz. As a result, the optimal dimensions and specific resistance of the SE are obtained, which provide a VSWR of no more than 2.0, a relative sensitivity around 0.0046 kW-1 fluctuating within ± 17.3%, and a maximum enduring power of about 4.3 MW.

Key words: circular waveguide, high-power millimeter wave, on-line measurement

中图分类号: 

  • 87.50.U-