中国物理B ›› 2015, Vol. 24 ›› Issue (9): 97504-097504.doi: 10.1088/1674-1056/24/9/097504

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Room-temperature ferromagnetism induced by Cu vacancies in Cux(Cu2O)1-x granular films

解新建a, 李好博b, 王卫超b, 卢峰b, 于红云c, 王维华b, 程雅慧b, 郑荣坤d, 刘晖b   

  1. a School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
    b Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China;
    c Center for Testing and Analyzing of Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
    d School of Physics, University of Sydney, NSW 2006, Australia
  • 收稿日期:2015-02-07 修回日期:2015-03-12 出版日期:2015-09-05 发布日期:2015-09-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11104148, 51101088, and 51171082), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC37700 and 13JCQNJC02800), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110031110034), and the Fundamental Research Funds for the Central Universities, China.

Room-temperature ferromagnetism induced by Cu vacancies in Cux(Cu2O)1-x granular films

Xie Xin-Jian (解新建)a, Li Hao-Bo (李好博)b, Wang Wei-Chao (王卫超)b, Lu Feng (卢峰)b, Yu Hong-Yun (于红云)c, Wang Wei-Hua (王维华)b, Cheng Ya-Hui (程雅慧)b, Zheng Rong-Kun (郑荣坤)d, Liu Hui (刘晖)b   

  1. a School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130, China;
    b Department of Electronics and Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China;
    c Center for Testing and Analyzing of Materials, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;
    d School of Physics, University of Sydney, NSW 2006, Australia
  • Received:2015-02-07 Revised:2015-03-12 Online:2015-09-05 Published:2015-09-05
  • Contact: Wang Wei-Hua, Cheng Ya-Hui E-mail:whwangnk@nankai.edu.cn;chengyahui@nankai.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11104148, 51101088, and 51171082), the Tianjin Natural Science Foundation, China (Grant Nos. 14JCZDJC37700 and 13JCQNJC02800), the Specialized Research Fund for the Doctoral Program of Higher Education, China (Grant No. 20110031110034), and the Fundamental Research Funds for the Central Universities, China.

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摘要： Cux(Cu2O)1-x (0.09≤Cux≤1.00) granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux(Cu2O)1-x deposition. Room-temperature ferromagnetism (FM) is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux(Cu2O)1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

关键词: Cux(Cu2O)1-x granular films, room-temperature ferromagnetism, oxide diluted magnetic semiconductors

Abstract: Cux(Cu2O)1-x (0.09≤Cux≤1.00) granular films with thickness about 280 nm have been fabricated by direct current reactive magnetron sputtering. The atomic ratio x can be controlled by the oxygen flow rate during Cux(Cu2O)1-x deposition. Room-temperature ferromagnetism (FM) is found in all of the samples. The saturated magnetization increases at first and then decreases with the decrease of x. The photoluminescence spectra show that the magnetization is closely correlated with the Cu vacancies in the Cux(Cu2O)1-x granular films. Fundamentally, the FM could be understood by the Stoner model based on the charge transfer mechanism. These results may provide solid evidence and physical insights on the origin of FM in the Cu2O-based oxides diluted magnetic semiconductors, especially for systems without intentional magnetic atom doping.

Key words: Cux(Cu2O)1-x granular films, room-temperature ferromagnetism, oxide diluted magnetic semiconductors

中图分类号:  (Magnetic semiconductors)

  • 75.50.Pp
75.70.Cn (Magnetic properties of interfaces (multilayers, superlattices, heterostructures)) 75.70.-i (Magnetic properties of thin films, surfaces, and interfaces)