Mechanical properties of GaxIn1-xAsyP1-y/GaAs systemat different temperatures and pressures

doi:10.1088/1674-1056/24/9/094302

中国物理B ›› 2015, Vol. 24 ›› Issue (9): 94302-094302.doi: 10.1088/1674-1056/24/9/094302

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇下一篇

Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures

A. R. Degheidy, E. B. Elkenany

Department of Physics, Faculty of Science, Mansoura University, Mansoura, Egypt

收稿日期:2015-01-25 修回日期:2015-03-15 出版日期:2015-09-05 发布日期:2015-09-05

Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures

A. R. Degheidy, E. B. Elkenany

Department of Physics, Faculty of Science, Mansoura University, Mansoura, Egypt

Received:2015-01-25 Revised:2015-03-15 Online:2015-09-05 Published:2015-09-05
Contact: E. B. Elkenany E-mail:kena@mans.edu.eg

摘要/Abstract

摘要： The mechanical properties, such as the elastic constants C₁₁, C₁₂, C₄₄, and bulk, Young's, and shear moduli, of a Ga_xIn_1-xAs_yP_1-y alloy lattice matching to a GaAs substrate are calculated for various As concentrations. The calculations are based on the pseudo-potential method within the virtual crystal approximation containing the effective disorder potential. The variations of the studied properties with pressure and temperature are investigated. A comparison between the calculated results and the available published data for binary parent compounds shows that they have good agreement, while the calculated results for the quaternary alloys at various temperature and pressure may be taken as a reference.

关键词: electronic band gaps, elastic constants, temperature and pressure

Abstract: The mechanical properties, such as the elastic constants C₁₁, C₁₂, C₄₄, and bulk, Young's, and shear moduli, of a Ga_xIn_1-xAs_yP_1-y alloy lattice matching to a GaAs substrate are calculated for various As concentrations. The calculations are based on the pseudo-potential method within the virtual crystal approximation containing the effective disorder potential. The variations of the studied properties with pressure and temperature are investigated. A comparison between the calculated results and the available published data for binary parent compounds shows that they have good agreement, while the calculated results for the quaternary alloys at various temperature and pressure may be taken as a reference.

Key words: elastic constants, temperature and pressure, electronic band gaps

中图分类号: (Ultrasonic velocity, dispersion, scattering, diffraction, and Attenuation in solids; elastic constants)

43.35.Cg

81.40.Vw (Pressure treatment) 31.10.+z (Theory of electronic structure, electronic transitions, and chemical binding) 42.70.Qs (Photonic bandgap materials)

A. R. Degheidy, E. B. Elkenany. Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures[J]. 中国物理B, 2015, 24(9): 94302-094302.

A. R. Degheidy, E. B. Elkenany. Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures[J]. Chin. Phys. B, 2015, 24(9): 94302-094302.

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Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures

Mechanical properties of Ga_xIn_1-xAs_yP_1-y/GaAs systemat different temperatures and pressures

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