Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

doi:10.1088/1674-1056/24/4/047302

›› 2015, Vol. 24 ›› Issue (4): 47302-047302.doi: 10.1088/1674-1056/24/4/047302

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

Morteza Charmi

Department of Nano Physics, Malekashtar University of Technology, Shahinshahr, Isfahan, Iran

收稿日期:2014-09-11 修回日期:2014-11-04 出版日期:2015-04-05 发布日期:2015-04-05

Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

Morteza Charmi

Department of Nano Physics, Malekashtar University of Technology, Shahinshahr, Isfahan, Iran

Received:2014-09-11 Revised:2014-11-04 Online:2015-04-05 Published:2015-04-05
Contact: Morteza Charmi E-mail:charmi@guilan.ac.ir

摘要/Abstract

摘要： Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional (2D) Poisson equation and the Schrödinger equation within the non-equilibrium Green's function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.

关键词: DG-MOSFET, effective oxide thickness, non-equilibrium Green', s function, oxide thickness, gate dielectric permittivity

Abstract: Impacts of effective oxide thickness on a symmetric double-gate MOSFET with 9-nm gate length are studied, using full quantum simulation. The simulations are based on a self-consistent solution of the two-dimensional (2D) Poisson equation and the Schrödinger equation within the non-equilibrium Green's function formalism. Oxide thickness and gate dielectric are investigated in terms of drain current, on-off current ratio, off current, sub-threshold swing, drain induced barrier lowering, transconductance, drain conductance, and voltage. Simulation results illustrate that we can improve the device performance by proper selection of the effective oxide thickness.

Key words: DG-MOSFET, effective oxide thickness, non-equilibrium Green's function, oxide thickness, gate dielectric permittivity

中图分类号: (Ballistic transport)

73.23.Ad

73.23.-b (Electronic transport in mesoscopic systems) 85.30.De (Semiconductor-device characterization, design, and modeling) 85.35.-p (Nanoelectronic devices)

Morteza Charmi. Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs[J]. , 2015, 24(4): 47302-047302.

Morteza Charmi. Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs[J]. Chin. Phys. B, 2015, 24(4): 47302-047302.

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Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs

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