›› 2015, Vol. 24 ›› Issue (1): 16102-016102.doi: 10.1088/1674-1056/24/1/016102

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

陈建军, 池雅庆, 梁斌   

  1. School of Computer Science, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2014-03-07 修回日期:2014-08-30 出版日期:2015-01-05 发布日期:2015-01-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376109) and the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component, China (Grant No. ZHD201202).

Mechanism of single-event transient pulse quenching between dummy gate isolated logic nodes

Chen Jian-Jun (陈建军), Chi Ya-Qing (池雅庆), Liang Bin (梁斌)   

  1. School of Computer Science, National University of Defense Technology, Changsha 410073, China
  • Received:2014-03-07 Revised:2014-08-30 Online:2015-01-05 Published:2015-01-05
  • Contact: Chen Jian-Jun E-mail:cjj192000@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61376109) and the Opening Project of National Key Laboratory of Science and Technology on Reliability Physics and Application Technology of Electrical Component, China (Grant No. ZHD201202).

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摘要： As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes. The so-called single-event transient (SET) pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation (STI). The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional (3D) technology computer-aided design simulation (TCAD) results show that this technique can achieve efficient SET mitigation.

关键词: single-event transients (SETs), dummy gate isolation, SET pulse quenching, radiation hardened by design (RHBD)

Abstract: As integrated circuits scale down in size, a single high-energy ion strike often affects multiple adjacent logic nodes. The so-called single-event transient (SET) pulse quenching induced by single-event charge sharing collection has been widely studied. In this paper, SET pulse quenching enhancement is found in dummy gate isolated adjacent logic nodes compared with that isolated by the common shallow trench isolation (STI). The physical mechanism is studied in depth and this isolation technique is explored for SET mitigation in combinational standard cells. Three-dimensional (3D) technology computer-aided design simulation (TCAD) results show that this technique can achieve efficient SET mitigation.

Key words: single-event transients (SETs), dummy gate isolation, SET pulse quenching, radiation hardened by design (RHBD)

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
85.30.Tv (Field effect devices) 85.30.Pq (Bipolar transistors)