中国物理B ›› 2014, Vol. 23 ›› Issue (3): 34208-034208.doi: 10.1088/1674-1056/23/3/034208
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
黄璐a, 金晶a, 史伟民a, 袁志军b, 杨伟光a, 曹泽淳a, 王林军a, 周军b, 楼祺洪b
Huang Lu (黄璐)a, Jin Jing (金晶)a, Shi Wei-Min (史伟民)a, Yuan Zhi-Jun (袁志军)b, Yang Wei-Guang (杨伟光)a, Cao Ze-Chun (曹泽淳)a, Wang Lin-Jun (王林军)a, Zhou Jun (周军)b, Lou Qi-Hong (楼祺洪)b
摘要: The effect of laser energy density on the crystallization of hydrogenated intrinsic amorphous silicon (a-Si:H) thin films was studied both theoretically and experimentally. The thin films were irritated by a frequency-doubled (λ=532 nm) Nd:YAG pulsed nanosecond laser. An effective density functional theory model was built to reveal the variation of bandgap energy influenced by thermal stress after laser irradiation. Experimental results establish correlation between the thermal stress and the shift of transverse optical peak in Raman spectroscopy and suggest that the relatively greater shift of the transverse optical (TO) peak can produce higher stress. The highest crystalline fraction (84.5%) is obtained in the optimized laser energy density (1000 mJ/cm2) with a considerable stress release. The absorption edge energy measured by the UV-visible spectra is in fairly good agreement with the bandgap energy in the density functional theory (DFT) simulation.
中图分类号: (Laser applications)