中国物理B ›› 2013, Vol. 22 ›› Issue (8): 87504-087504.doi: 10.1088/1674-1056/22/8/087504

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

L10 FePt thin films with [001] crystalline growth fabricated by ZnO addition and rapid thermal annealing

刘曦a b, Ishio Shunjic   

  1. a Key Laboratory of Ministry of Education for Opto-Electronic Technology and Intelligent Control, Lanzhou Jiaotong University, Lanzhou 730070, China;
    b Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
    c Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan
  • 收稿日期:2012-12-07 修回日期:2013-01-23 出版日期:2013-06-27 发布日期:2013-06-27

L10 FePt thin films with [001] crystalline growth fabricated by ZnO addition and rapid thermal annealing

Liu Xi (刘曦)a b, Ishio Shunjic   

  1. a Key Laboratory of Ministry of Education for Opto-Electronic Technology and Intelligent Control, Lanzhou Jiaotong University, Lanzhou 730070, China;
    b Department of Materials Science and Engineering, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan;
    c Venture Business Laboratory, Akita University, Tegata Gakuen-machi, Akita 010-8502, Japan
  • Received:2012-12-07 Revised:2013-01-23 Online:2013-06-27 Published:2013-06-27
  • Contact: Liu Xi E-mail:liuxi@mail.lzjtu.cn

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摘要： FePt films with a high degree of order S of the L10 structure (S > 0.90) and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing (RTA) process. The optimum condition to prepare high-ordering L10 FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing. The effect of the ZnO additive on the ordering process of the L10 FePtZnO films is discussed. In the annealing process, Zn atoms move to the film surface and evaporate. The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.

关键词: FePt thin film, magnetic recording material, rapid-thermal-annealing, oxide addition

Abstract: FePt films with a high degree of order S of the L10 structure (S > 0.90) and well defined [001] crystalline growth perpendicular to the film plane are fabricated on thermally oxidized Si substrates by the addition of ZnO and a successive rapid thermal annealing (RTA) process. The optimum condition to prepare high-ordering L10 FePtZnO films is 20 vol% ZnO addition and 450 ℃ annealing. The effect of the ZnO additive on the ordering process of the L10 FePtZnO films is discussed. In the annealing process, Zn atoms move to the film surface and evaporate. The motion of the Zn atoms accelerates the intergrain exchange and decreases the ordering temperature.

Key words: FePt thin film, magnetic recording material, rapid-thermal-annealing, oxide addition

中图分类号:  (Magnetic recording materials)

  • 75.50.Ss
75.70.-i (Magnetic properties of thin films, surfaces, and interfaces) 75.50.Bb (Fe and its alloys) 81.40.Rs (Electrical and magnetic properties related to treatment conditions)