The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

doi:10.1088/1674-1056/22/6/067503

中国物理B ›› 2013, Vol. 22 ›› Issue (6): 67503-067503.doi: 10.1088/1674-1056/22/6/067503

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

冉从军, 杨海龄, 王延恺, Hassan Farooq M, 周丽宫, 徐晓光, 姜勇

School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

收稿日期:2012-12-10 修回日期:2013-01-16 出版日期:2013-05-01 发布日期:2013-05-01
基金资助:
Project partially supported by the National Basic Research Program of China (Grant No. 2012CB932702), the National High Technology Research and Development Program of China (Grant No. 2013AA031601), the National Natural Science Foundation of China (Grant Nos. 50831002, 51071022, 11174031, and 51271020), PCSIRT, Beijing Nova Program (Grant No. 2011031), and the Fundamental Research Funds for the Central Universities.

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

Ran Cong-Jun (冉从军), Yang Hai-Ling (杨海龄), Wang Yan-Kai (王延恺), Hassan Farooq M, Zhou Li-Gong (周丽宫), Xu Xiao-Guang (徐晓光), Jiang Yong (姜勇)

School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Received:2012-12-10 Revised:2013-01-16 Online:2013-05-01 Published:2013-05-01
Contact: Xu Xiao-Guang E-mail:xgxu@ustb.edu.cn
Supported by:
Project partially supported by the National Basic Research Program of China (Grant No. 2012CB932702), the National High Technology Research and Development Program of China (Grant No. 2013AA031601), the National Natural Science Foundation of China (Grant Nos. 50831002, 51071022, 11174031, and 51271020), PCSIRT, Beijing Nova Program (Grant No. 2011031), and the Fundamental Research Funds for the Central Universities.

摘要/Abstract

摘要： Zn_0.99Cu_0.01O films were studied both experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt(111)/Ti/SiO₂/Si substrates under various oxygen pressures to investigate the growth-dependence of ferromagnetic (FM) properties. The structural, magnetic, and optical properties were studied. It was found that all the samples possess a typical wurtzite structure, and the films exhibit room temperature ferromagnetism. The sample deposited at 600 ℃ and oxygen pressure of 10 Pa shows a large saturation magnetization of 0.83 μ_B/Cu. The enhanced FM in the (Cu, Li)-codoped ZnO is attributable to the existence of Zn vacancies (V_Zn), as shown by first-principles calculations. The photoluminescence analysis demonstrates the existence of V_Zn in both Zn_0.99Cu_0.01O and (Cu, Li)-codoped ZnO thin films, which plays an important role in the increase of ferromagnetism, according to the results of first-principles calculations.

关键词: dilute magnetic semiconductor, Cu-doped ZnO, pulsed laser deposition, first-principles

Abstract: Zn_0.99Cu_0.01O films were studied both experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt(111)/Ti/SiO₂/Si substrates under various oxygen pressures to investigate the growth-dependence of ferromagnetic (FM) properties. The structural, magnetic, and optical properties were studied. It was found that all the samples possess a typical wurtzite structure, and the films exhibit room temperature ferromagnetism. The sample deposited at 600 ℃ and oxygen pressure of 10 Pa shows a large saturation magnetization of 0.83 μ_B/Cu. The enhanced FM in the (Cu, Li)-codoped ZnO is attributable to the existence of Zn vacancies (V_Zn), as shown by first-principles calculations. The photoluminescence analysis demonstrates the existence of V_Zn in both Zn_0.99Cu_0.01O and (Cu, Li)-codoped ZnO thin films, which plays an important role in the increase of ferromagnetism, according to the results of first-principles calculations.

Key words: dilute magnetic semiconductor, Cu-doped ZnO, pulsed laser deposition, first-principles

中图分类号: (Magnetic semiconductors)

75.50.Pp

71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)

冉从军, 杨海龄, 王延恺, Hassan Farooq M, 周丽宫, 徐晓光, 姜勇. The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping[J]. 中国物理B, 2013, 22(6): 67503-067503.

Ran Cong-Jun (冉从军), Yang Hai-Ling (杨海龄), Wang Yan-Kai (王延恺), Hassan Farooq M, Zhou Li-Gong (周丽宫), Xu Xiao-Guang (徐晓光), Jiang Yong (姜勇). The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping[J]. Chin. Phys. B, 2013, 22(6): 67503-067503.

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The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

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