中国物理B ›› 2013, Vol. 22 ›› Issue (4): 47202-047202.doi: 10.1088/1674-1056/22/4/047202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector

袁思芃, 申超, 郑厚植, 刘奇, 王丽国, 孟康康, 赵建华   

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2012-08-13 修回日期:2012-10-12 出版日期:2013-03-01 发布日期:2013-03-01
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB932901) and the National Natural Science Foundation of China (Grant No. 60836002).

Spin-polarized injection into p-type GaAs layer from a Co2MnAl injector

Yuan Si-Peng (袁思芃), Shen Chao (申超), Zheng Hou-Zhi (郑厚植), Liu Qi (刘奇), Wang Li-Guo (王丽国), Meng Kang-Kang (孟康康), Zhao Jian-Hua (赵建华)   

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2012-08-13 Revised:2012-10-12 Online:2013-03-01 Published:2013-03-01
  • Contact: Zheng Hou-Zhi E-mail:hzzheng@red.semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2011CB932901) and the National Natural Science Foundation of China (Grant No. 60836002).

PDF (PC)

675

赞

摘要： Electric luminescence and its circular polarization in a Co2MnAl injector-based light emitting diode (LED) has been detected at the transition of e-AC0, where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p+-GaAs layer. The large volume of the p+-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-AC0 emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p+-GaAs layer, where the spin polarization of injected electrons is destroyed by very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.

关键词: spin injection, Co2MnAl Heusler alloy, electric luminescence

Abstract: Electric luminescence and its circular polarization in a Co2MnAl injector-based light emitting diode (LED) has been detected at the transition of e-AC0, where injected spin-polarized electrons recombine with bound holes at carbon acceptors. A spin polarization degree of 24.6% is obtained at 77 K after spin-polarized electrons traverse a distance of 300 nm before they recombine with holes bound at neutral carbon acceptors in a p+-GaAs layer. The large volume of the p+-GaAs layer can facilitate the detection of weak electric luminescence (EL) from e-AC0 emission without being quenched at higher bias as in quantum wells. Moreover, unlike the interband electric luminescence in the p+-GaAs layer, where the spin polarization of injected electrons is destroyed by very effective electron-hole exchange scattering (BAP mechanism), the spin polarization of injected electrons seems to survive during their recombination with holes bound at carbon acceptors.

Key words: spin injection, Co2MnAl Heusler alloy, electric luminescence

中图分类号:  (Spin transport through interfaces)

  • 72.25.Mk
75.50.Cc (Other ferromagnetic metals and alloys) 78.60.Fi (Electroluminescence)