中国物理B ›› 2012, Vol. 21 ›› Issue (9): 97502-097502.doi: 10.1088/1674-1056/21/9/097502

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment

董珊, 朱峰   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2012-01-13 修回日期:2012-03-11 出版日期:2012-08-01 发布日期:2012-08-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60925016).

Electron-mediated ferromagnetism in Fe-doped InP: Theory and experiment

Dong Shan (董珊), Zhu Feng (朱峰)   

  1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2012-01-13 Revised:2012-03-11 Online:2012-08-01 Published:2012-08-01
  • Contact: Dong Shan E-mail:dongshan08@semi.ac.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60925016).

摘要: We report on the electron-mediated ferromagnetism in Fe-doped InP from both first-principles calculations and experiments. Theoretically, based on spin-polarized density functional theory within Heyd-Scuseria-Ernzerhof (HSE03) approach, we systematically investigate the magnetic properties of Fe-doped InP and predict the existence of electron-mediated ferromagnetism. Experimentally, by diffusing Fe into the n-type InP wafer with thermal annealing at 800 ℃, we observe room-temperature ferromagnetism in InP:Fe, which is in agreement with the theoretical prediction.

关键词: ferromagnetism, Fe-doped InP, first-principles calculations

Abstract: We report on the electron-mediated ferromagnetism in Fe-doped InP from both first-principles calculations and experiments. Theoretically, based on spin-polarized density functional theory within Heyd-Scuseria-Ernzerhof (HSE03) approach, we systematically investigate the magnetic properties of Fe-doped InP and predict the existence of electron-mediated ferromagnetism. Experimentally, by diffusing Fe into the n-type InP wafer with thermal annealing at 800 ℃, we observe room-temperature ferromagnetism in InP:Fe, which is in agreement with the theoretical prediction.

Key words: ferromagnetism, Fe-doped InP, first-principles calculations

中图分类号:  (Magnetic semiconductors)

  • 75.50.Pp
71.55.-i (Impurity and defect levels) 71.70.-d (Level splitting and interactions)