Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

doi:10.1088/1674-1056/21/8/089401

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 89401-089401.doi: 10.1088/1674-1056/21/8/089401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇下一篇

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

秦军瑞, 陈书明, 李达维, 梁斌, 刘必慰

College of Computer, National University of Defense Technology, Changsha 410073, China

收稿日期:2011-11-28 修回日期:2011-12-20 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014).

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明), Li Da-Wei (李达维), Liang Bin (梁斌), Liu Bi-Wei (刘必慰 )

College of Computer, National University of Defense Technology, Changsha 410073, China

Received:2011-11-28 Revised:2011-12-20 Online:2012-07-01 Published:2012-07-01
Contact: Qin Jun-Rui E-mail:qinjr@nudt.edu.cn
Supported by:
Project supported by the State Key Program of the National Natural Science of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 60906014).

摘要/Abstract

摘要： In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V-1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

关键词: fin field-effect transistor, single event transient, temperature dependence, drain bias dependence

Abstract: In this paper, we investigate the temperature and drain bias dependency of single event transient (SET) in 25-nm fin field-effect-transistor (FinFET) technology in a temperature range of 0-135 ℃ and supply voltage range of 0.4 V-1.6 V. Technology computer-aided design (TCAD) three-dimensional simulation results show that the drain current pulse duration increases from 0.6 ns to 3.4 ns when the temperature increases from 0 to 135 ℃. The charge collected increases from 45.5 fC to 436.9 fC and the voltage pulse width decreases from 0.54 ns to 0.18 ns when supply voltage increases from 0.4 V to 1.6 V. Furthermore, simulation results and the mechanism of temperature and bias dependency are discussed.

Key words: fin field-effect transistor, single event transient, temperature dependence, drain bias dependence

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

秦军瑞, 陈书明, 李达维, 梁斌, 刘必慰 . Temperature and drain bias dependence of single event transient in 25-nm FinFET technology[J]. 中国物理B, 2012, 21(8): 89401-089401.

Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明), Li Da-Wei (李达维), Liang Bin (梁斌), Liu Bi-Wei (刘必慰 ). Temperature and drain bias dependence of single event transient in 25-nm FinFET technology[J]. Chin. Phys. B, 2012, 21(8): 89401-089401.

参考文献 16

[1]	Narasimham B, Amusan O A, Bhuva B L, Schrimpf R D and Holman W T 2008 IEEE Trans. Nucl. Sci. 55 3077
[2]	Asenov A, Andrew R B, John H D and Subhash S 1999 IEEE Trans. CAD of Integrated Circuits and Systems 18 1558
[3]	International Technology Roadmap for Semiconductor (ITRS), online available: www.itrs.net/Links/2005ITRS/PIDS2005.pdf
[4]	Wong H S P, Frank D J, Solomon P M, Wann C H J and Welser J J 1999 Proceedings of the IEEE 87 537
[5]	He C H, Geng B, He B P, Yao Y J, Li Y H, Peng H L, Lin D S, Zhou H and Chen Y S 2004 Acta Phys. Sin. 53 194 (in Chinese)
[6]	Liu Z, Chen S M, Liang B, Liu B W and Zhao Z Y 2009 Acta Phys. Sin. 59 649 (in Chinese)
[7]	Qin J R, Chen S M, Liu B W, Chen J J, Liang B and Liu Z 2011 Sci. Chin.: Tech. Sci. 54 3064
[8]	Chen S M, Liang B, Liu B W and Liu Z 2008 IEEE Trans. Nucl. Sci. 55 2914
[9]	Liu B W, Chen S M, Liang B, Liu Z and Zhao Z Y 2009 IEEE Trans. Nucl. Sci. 56 2473
[10]	Gadlage M J, Ahlbin J R, Ramachandran V, Gouker P, Dinkins C A, Bhuva B L, Narasimham B, Schrimpf R D, McCurdy M W, Alles M L, Reed R A, Mendenhall M H, Massengill L W, Shuler R L and McMorrow D 2009 IEEE Trans. Nucl. Sci. 56 3115
[11]	Casey M C, Bhuva B L, Nation S A, Amusan O A, Loveless T D, Massengill L W, McMorrow D and Melinger J S 2009 Proc. IRPS, Montreal QC, Canada p. 194
[12]	Garg R and Khatri S P 2009 Proc. ICCD, Lake Tahoe, CA, USA p. 498
[13]	Fuketa H, Hashimoto M, Mitsuyama Y and Onoye T 2010 Proc. IRPS, Anaheim, CA, USA p. 213
[14]	Three-dimensional Simulations of Raised Source-Drain FinFET, online available: ftp.synopsys.com/TCAD_-Sentaurus_-Applications_-D-2010.03
[15]	Chang C Y, Lee T L, Wann C, Lai L S, Chen H M, Yeh C C, Chang C S, Ho C C, Sheu J C, Kwok T M, Feng Y A and Yu S M 2009 IEDM Technical Digest, Baltimore, MD, USA p. 293
[16]	Kawasaki H, Basker V S, Yamashita T, Lin C H, Zhu Y, Faltermeier J, Schmitz S, Cummings J, Kanakasabapathy S, Adhikari H, Jagannathan H, Kumar A, Maitra K, Wang J and Yeh C C 2009 IEDM Technical Digest, Baltimore, MD, USA p. 289

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

Temperature and drain bias dependence of single event transient in 25-nm FinFET technology

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 16

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Ying-Ze Wang(王颖泽), Xiao-Yu Lu(陆晓宇), and Dong Liu(刘栋). Heat transport properties within living biological tissues with temperature-dependent thermal properties[J]. 中国物理B, 2023, 32(1): 14401-014401.
[2]	Jianan Wei(魏佳男), Yang Li(李洋), Wenlong Liao(廖文龙), Fang Liu(刘方), Yonghong Li(李永宏), Jiancheng Liu(刘建成), Chaohui He(贺朝会), and Gang Guo(郭刚). Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors[J]. 中国物理B, 2022, 31(8): 86106-086106.
[3]	Lijun Ni(倪丽君), Wenqiang Wang(王文强), Lichuan Jin(金立川), Jiandong Ye(叶建东), Hehe Gong(巩贺贺), Xiang Zhan(战翔), Zhendong Chen(陈振东), Longlong Zhang(张龙龙), Xingze Dai(代兴泽), Yao Li(黎遥), Rong Zhang(张荣), Yi Yang(杨燚), Huaiwu Zhang(张怀武), Ronghua Liu(刘荣华), Lina Chen(陈丽娜), and Yongbing Xu(徐永兵). Temperature dependence of spin pumping in YIG/NiO_x/W multilayer[J]. 中国物理B, 2022, 31(12): 128504-128504.
[4]	Shao-Hua Yang(杨少华), Zhan-Gang Zhang(张战刚), Zhi-Feng Lei(雷志锋), Yun Huang(黄云), Kai Xi(习凯), Song-Lin Wang(王松林), Tian-Jiao Liang(梁天骄), Teng Tong(童腾), Xiao-Hui Li(李晓辉), Chao Peng(彭超), Fu-Gen Wu(吴福根), and Bin Li(李斌). Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs[J]. 中国物理B, 2022, 31(12): 126103-126103.
[5]	陈孝章, 顾乐华, 刘岚, 陈华威, 栗敬俣, 刘春森, 周鹏. Temperature-switching logic in MoS₂ single transistors[J]. 中国物理B, 2020, 29(9): 97201-097201.
[6]	黄乃兴, 孙恩伟, 张锐, 杨彬, 刘俭, 吕天全, 曹文武. Temperature dependence of mode coupling effect in piezoelectric vibrator made of [001]_c-poled Mn-doped 0.24PIN-0.46PMN-0.30PT ternary single crystals with high electromechanical coupling factor[J]. 中国物理B, 2020, 29(7): 75201-075201.
[7]	周康敏, 缪巍, 耿悦, Yan Delorme, 张文, 任远, 张坤, 史生才. Noise temperature distribution of superconducting hot electron bolometer mixers[J]. 中国物理B, 2020, 29(5): 58505-058505.
[8]	郑芳林, 刘程晟, 任佳琪, 石艳玲, 孙亚宾, 李小进. Analytical capacitance model for 14 nm FinFET considering dual-k spacer[J]. 中国物理B, 2017, 26(7): 77303-077303.
[9]	杨冠卿, 张世著, 徐波, 陈涌海, 王占国. Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method[J]. 中国物理B, 2017, 26(6): 68103-068103.
[10]	孙亚宾, 付军, 王玉东, 周卫, 张伟, 刘志弘. Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model[J]. 中国物理B, 2016, 25(4): 48501-048501.
[11]	贾云鹏, 赵豹, 杨霏, 吴郁, 周璇, 李哲, 谭健. Effect of combined platinum and electron on the temperature dependence of forward voltage in fast recovery diode[J]. 中国物理B, 2015, 24(12): 126104-126104.
[12]	于俊庭, 陈书明, 陈建军, 黄鹏程. Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation[J]. 中国物理B, 2015, 24(11): 119401-119401.
[13]	武玫, 郑大勇, 王媛, 陈伟伟, 张凯, 马晓华, 张进成, 郝跃. Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range[J]. , 2014, 23(9): 97307-097307.
[14]	毕津顺, 曾传滨, 高林春, 刘刚, 罗家俊, 韩郑生. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET[J]. , 2014, 23(8): 88505-088505.
[15]	何益百, 陈书明. Experimental verification of the parasitic bipolar amplification effect in PMOS single event transients[J]. , 2014, 23(7): 79401-079401.