中国物理B ›› 2010, Vol. 19 ›› Issue (9): 90701-090701.doi: 10.1088/1674-1056/19/9/090701

• GENERAL • 上一篇    下一篇

Spectroscopic ellipsometric study of the optical properties of Ag2O film prepared by direct-current magnetron reactive sputtering

郜小勇, 冯红亮, 马姣民, 张增院   

  1. The Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
  • 收稿日期:2009-10-15 修回日期:2009-12-09 出版日期:2010-09-15 发布日期:2010-09-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60807001) and Foundation of Henan Educational Committee (Grant No. 2010A140017).

Spectroscopic ellipsometric study of the optical properties of Ag2O film prepared by direct-current magnetron reactive sputtering

Gao Xiao-Yong(郜小勇), Feng Hong-Liang(冯红亮), Ma Jiao-Min(马姣民), and Zhang Zeng-Yuan(张增院)   

  1. The Key Laboratory of Material Physics of Ministry of Education, School of Physics and Engineering, Zhengzhou University, Zhengzhou 450052, China
  • Received:2009-10-15 Revised:2009-12-09 Online:2010-09-15 Published:2010-09-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60807001) and Foundation of Henan Educational Committee (Grant No. 2010A140017).

摘要: The Ag2O film, as-deposited by direct-current magnetron reactive sputtering at a substrate temperature of 150 °C, clearly shows a preferential orientation (111), and is capable of lowering the threshold value of the thermal decomposition temperature to about 200 °C, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film.

Abstract: The Ag2O film, as-deposited by direct-current magnetron reactive sputtering at a substrate temperature of 150 ℃, clearly shows a preferential orientation (111), and is capable of lowering the threshold value of the thermal decomposition temperature to about 200 ℃, which is helpful to its application in optical and magneto-optical storage. This paper fits its optical constants in terms of a general oscillator model by using measured ellipsometric parameters. The fitted oscillator energy 2.487 eV is close to the optical direct interband transition energy value of the Ag2O film determined by Tauc equation; whereas, the fitted oscillator energy 4.249 eV is far from the fitted plasma oscillator energy 4.756 eV by single-oscillator energy. The photoluminescence spectrum centred at about 2.31 eV indicates a direct-energy gap photoluminescence mechanism of the Ag2O film.

Key words: Ag2O film, spectroscopic ellipsometry, general oscillator model, single-oscillator model

中图分类号: 

  • 0760F