中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37505-037505.doi: 10.1088/1674-1056/19/3/037505

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Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

祁先进1, 王寅岗1, 缪雪飞1, 李子全1, 黄一中2   

  1. (1)College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; (2)Department of Materials, Oxford University, Oxford OX1 3PH, UK;School of Materials Science and Engineering, Nanyang Technological University, Singapore
  • 收稿日期:2009-06-30 修回日期:2009-10-11 出版日期:2010-03-15 发布日期:2010-03-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.~50671048).

Influence of Ga+ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

Qi Xian-Jin(祁先进)a), Wang Yin-Gang (王寅岗) a)†, Miao Xue-Fei(缪雪飞)a), Li Zi-Quan(李子全)a), and Huang Yi-Zhong(黄一中) b)c)   

  1. a College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; b Department of Materials, Oxford University, Oxford OX1 3PH, UK; c School of Materials Science and Engineering, Nanyang Technological University, Singapore
  • Received:2009-06-30 Revised:2009-10-11 Online:2010-03-15 Published:2010-03-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.~50671048).

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摘要： Ga+ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance (MR) are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6× 1013 ions/cm2 and the step disappears afterwards. Two peaks in the R--H curve are found to be asymmetric.

Abstract: Ga+ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance (MR) are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×1013 ions/cm2 and the step disappears afterwards. Two peaks in the R--H curve are found to be asymmetric.

Key words: ion irradiation, magnetisation reversal, magnetoresistance, exchange bias

中图分类号:  (Magnetic properties of interfaces (multilayers, superlattices, heterostructures))

  • 75.70.Cn
85.70.Kh (Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.) 61.80.Jh (Ion radiation effects) 75.60.Jk (Magnetization reversal mechanisms) 72.15.Gd (Galvanomagnetic and other magnetotransport effects)