Strain effects on optical polarisation properties in (1122) plane GaN films

doi:10.1088/1674-1056/19/11/117104

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117104-117105.doi: 10.1088/1674-1056/19/11/117104

Strain effects on optical polarisation properties in (1122) plane GaN films

陈涌海¹, 郝国栋², 范亚明², 黄晓辉², 王怀兵²

(1)Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Nano-Devices and Materials Division, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China

收稿日期:2009-12-25 修回日期:2010-06-21 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607), and the National Natural Science Foundation of China (Grant Nos. 60625402, 60990313 and 60990311).

Strain effects on optical polarisation properties in (1122) plane GaN films

Hao Guo-Dong(郝国栋)^a)^†, Chen Yong-Hai(陈涌海)^b), Fan Ya-Ming(范亚明)^a), Huang Xiao-Hui(黄晓辉)^a), and Wang Huai-Bing(王怀兵)^a)

^a Nano-Devices and Materials Division, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China; ^b Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2009-12-25 Revised:2010-06-21 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2006CB604908 and 2006CB921607), and the National Natural Science Foundation of China (Grant Nos. 60625402, 60990313 and 60990311).

摘要/Abstract

摘要： We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (11^-22)-plane. The calculations are performed by the κ• p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction. The results show that the transition energies decrease with the biaxial strains changing from -0.5% to 0.5%. For films of (11^-22)-plane, the strains are expected to be anisotropic in the growth plane. Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property. The strain can also result in optical polarisation switching phenomena. Finally, we discuss the applications of these properties to the (11^-22) plane GaN-based light-emitting diode and lase diode.

Abstract: We present the theoretical results of the electronic band structure of wurtzite GaN films under biaxial strains in the (1122)-plane. The calculations are performed by the κ• p perturbation theory approach through using the effective-mass Hamiltonian for an arbitrary direction. The results show that the transition energies decrease with the biaxial strains changing from –0.5% to 0.5%. For films of (1122)-plane, the strains are expected to be anisotropic in the growth plane. Such anisotropic strains give rise to valence band mixing which results in dramatic change in optical polarisation property. The strain can also result in optical polarisation switching phenomena. Finally, we discuss the applications of these properties to the (1122) plane GaN-based light-emitting diode and lase diode.

Key words: GaN, (11-22)-plane, strain, optical anisotropy

中图分类号: (Optical bistability, multistability, and switching, including local field effects)

42.65.Pc

71.15.-m (Methods of electronic structure calculations) 71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor) 71.20.Nr (Semiconductor compounds) 78.66.Fd (III-V semiconductors) 85.60.Dw (Photodiodes; phototransistors; photoresistors)

郝国栋, 陈涌海, 范亚明, 黄晓辉, 王怀兵. Strain effects on optical polarisation properties in (1122) plane GaN films[J]. 中国物理B, 2010, 19(11): 117104-117105.

Hao Guo-Dong(郝国栋), Chen Yong-Hai(陈涌海), Fan Ya-Ming(范亚明), Huang Xiao-Hui(黄晓辉), and Wang Huai-Bing(王怀兵). Strain effects on optical polarisation properties in (1122) plane GaN films[J]. Chin. Phys. B, 2010, 19(11): 117104-117105.

参考文献 30

[1]	Nakamura S, Senoh M, Iwasa N and Nagahama S 1995 Jpn. J. Appl. Phys. bf34 L797
[2]	Khan M A, Shatalov M, Maruska H P, Wang H M and Kuokstis E 2005 Jpn. J. Appl. Phys. bf44 7191
[3]	Zhang M and Ban S L 2009 Chin. Phys. B bf18 4449
[4]	Gil B 1998 Group Nitride Semiconductor Compounds (Oxford: Clarendon )
[5]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J and Park Y 2007 Appl. Phys. Lett. bf91 183507
[6]	Kuo Y K, Chang J Y, Tsai M C and Yen S H 2009 Appl. Phys. Lett. bf95 011116
[7]	Takeuchi T, Amano A and Akasaki I 2000 Jpn. J. Appl. Phys. bf39 413
[8]	Sizov D S, Bhat R, Napierala J, Gallinat C, Song K and Zah C 2009 Appl. Phys. Express bf2 071001
[9]	Masui H, Schmidt M, Fellows N, Yamada H, Iso K, Speck J S, Nakamura S and DenBaars S P 2009 Phys. Status Solidi A bf206 203
[10]	Schmidt M C, Kim K C, Sato H, Fwllows N and Masui H 2007 Jpn. J. Appl. Phys. bf46 L126
[11]	Sato H, Chung R B, Hirasawa H, Fellows N, Masui H, Wu F, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura S 2008 Appl. Phys. Lett. bf92 221110
[12]	Tyagi A, Lin Y D, Cohen D A, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura S 2008 Appl. Phys. Express bf1 091103
[13]	Asamizu H, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura S 2009 Appl. Phys. Express bf2 021002
[14]	Masui H, Cruz S C, Nakamura S and DenBaars S P 2009 J. Electron. Mater. bf38 756
[15]	Park S H and Chuang S L 1999 Phys. Rev. B bf59 4725
[16]	Yamaguchi A A 2008 Phys. Status Solidi C bf5 2329
[17]	Yamaguchi A A 2007 Jpn. J. Appl. Phys. bf46 L789
[18]	Fellows N, Sato H, Masui H, DenBaars S P and Nakamura S 2008 Jpn. J. Appl. Phys. bf47 7854
[19]	Park S H and Ahnb D 2007 Appl. Phys. Lett. bf90 013505
[20]	Ueda M, Funato M, Kojima K, Kawakami Y, Narukawa Y and Mukai T 2008 Phys. Rev. B bf78 233303
[21]	Masui H, Asamizu1 H, Tyagi A, DeMille N F, Nakamura S and DenBaars S P 2009 Appl. Phys. Express bf2 071002
[22]	Alemu A, Gil B, Julier M and Nakamura S 1998 Phys. Rev. B bf57 3761
[23]	Hao G H and Chen Y H 2008 Chin. Phys. Lett. 25 4139
[24]	Ghosh S, Waltereit P, Brandt O, Grahn H T and Ploog K H 2002 Phys. Rev. B bf65 075202
[25]	Ghosh S, Misra P, Grahn H T, Imer B, Nakamura S, DenBaars S P and Speck J S 2005 J. Appl. Phys. bf98 026105
[26]	Ghosh S, Misra P, Grahn H T, Imer B, Nakamura S, DenBaars S P and Speck J S 2006 Phys. Status Solidi B bf243 1441
[27]	Hao G D, Chen Y H and Hao Y F 2009 Jpn. J. Appl. Phys. bf48 041001
[28]	Chuang S L and Chang C S 1996 Phys. Rev. B bf54 2491
[29]	Kumagai M, Chuang S L and Ando H 1998 Phys. Rev. B bf57 15303
[30]	Chuang S L 1995 Physics of Optoelectronic Devices (New York: Wiley) Chap. 4

Strain effects on optical polarisation properties in (1122) plane GaN films

Strain effects on optical polarisation properties in (1122) plane GaN films

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 30

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Xiateng Qin(秦夏腾), Yuan Jiang(蒋源), Weixin Ma(马伟鑫), Zhonghua Ji(姬中华),Wenxin Peng(彭文鑫), and Yanting Zhao(赵延霆). Observation of V-type electromagnetically induced transparency and optical switch in cold Cs atoms by using nanofiber optical lattice[J]. 中国物理B, 2022, 31(6): 64216-064216.
[2]	Yingcong Zhang(张颖聪), Wenjuan Cai(蔡文娟), Xianping Wang(王贤平), Wen Yuan(袁文), Cheng Yin(殷澄), Jun Li(李俊), Haimei Luo(罗海梅), and Minghuang Sang(桑明煌). Low-threshold bistable reflection assisted by oscillating wave interaction with Kerr nonlinear medium[J]. 中国物理B, 2021, 30(8): 84203-084203.
[3]	Miao-Di Guo(郭苗迪) and Hong-Mei Li(李红梅). Absorption interferometer of two-sided cavity[J]. 中国物理B, 2021, 30(5): 54202-054202.
[4]	闫甲楷, 朱小霏, 陈彬. Controllable optical bistability in a three-mode optomechanical system with a membrane resonator[J]. 中国物理B, 2018, 27(7): 74214-074214.
[5]	钟东洲, 许葛亮, 罗伟, 肖珍珍. Reconfigurable dynamic all-optical chaotic logic operations in an optically injected VCSEL[J]. 中国物理B, 2017, 26(12): 124204-124204.
[6]	秦立国, 王中阳, 马鸿洋, 王淑梅, 龚尚庆. Electrically controlled optical switch in the hybrid opto-electromechanical system[J]. 中国物理B, 2017, 26(12): 128502-128502.
[7]	郭苗迪, 苏雪梅. Controllable double electromagnetically induced transparency in a closed four-level-loop cavity–atom system[J]. 中国物理B, 2017, 26(7): 74207-074207.
[8]	钟东洲, 罗伟, 许葛亮. Controllable all-optical stochastic logic gates and their delay storages based on the cascaded VCSELs with optical-injection[J]. 中国物理B, 2016, 25(9): 94202-094202.
[9]	夏秀文, 张新琴, 许静平, 羊亚平. High contrast all-optical diode based on direction-dependent optical bistability within asymmetric ring cavity[J]. 中国物理B, 2016, 25(8): 84211-084211.
[10]	Ghahraman Solookinejad, M Panahi, E Ahmadi, Seyyed Hossein Asadpour. Enhanced Kerr nonlinearity in a quantized four-level graphene nanostructure[J]. 中国物理B, 2016, 25(7): 74204-074204.
[11]	Seyyed Hossein Asadpour, G Solookinejad, M Panahi, E Ahmadi Sangachin. Optical bistability and multistability via double dark resonance in graphene nanostructure[J]. 中国物理B, 2016, 25(6): 64201-064201.
[12]	Seyyed Hossein Asadpour, G Solookinejad, M Panahi, E Ahmadi Sangachin. Optical bistability and multistability in a defect slab doped by GaAs/AlGaAs multiple quantum wells[J]. 中国物理B, 2016, 25(5): 54208-054208.
[13]	Hamedi H R, Mehmannavaz M R, Afshari Hadi. Control over hysteresis curves and thresholds of optical bistability in different semiconductor double quantum wells[J]. 中国物理B, 2015, 24(8): 84211-084211.
[14]	陈建军, 夏光琼, 吴正茂. Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection[J]. , 2015, 24(2): 24210-024210.
[15]	Asadpour Seyyed Hossein, Rahimpour Soleimani H. Er³⁺ ion concentration effect on transient and steady-state behaviorin Er³⁺ ：YAG crystal[J]. , 2014, 23(10): 104223-104223.