中国物理B ›› 2009, Vol. 18 ›› Issue (11): 5066-5071.doi: 10.1088/1674-1056/18/11/076

• • 上一篇    下一篇

Localized electronic states in gaps on hole-net structures of silicon

黄伟其, 吕泉, 张荣涛, 王晓允, 于示强   

  1. Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China
  • 收稿日期:2009-04-06 修回日期:2009-04-24 出版日期:2009-11-20 发布日期:2009-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10764002).

Localized electronic states in gaps on hole-net structures of silicon

Huang Wei-Qi(黄伟其)†,ü Quan(吕泉), Zhang Rong-Tao(张荣涛), Wang Xiao-Yun(王晓允), and Yu Shi-Qiang(于示强)   

  1. Key Laboratory of Photoelectron Technology and Application, Guizhou University, Guiyang 550026, China
  • Received:2009-04-06 Revised:2009-04-24 Online:2009-11-20 Published:2009-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10764002).

PDF (PC)

638

赞

摘要： Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence (PL) band in a the region of 650--750~nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Si=O bonds or Si--O--Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si--O--Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.

Abstract: Hole-net structure silicon is fabricated by laser irradiation and annealing, on which a photoluminescence (PL) band in a the region of 650--750 nm is pinned and its intensity increases obviously after oxidation. It is found that the PL intensity changes with both laser irradiation time and annealing time. Calculations show that some localized states appear in the band gap of the smaller nanocrystal when Si=O bonds or Si--O--Si bonds are passivated on the surface. It is discovered that the density and the number of Si=O bonds or Si--O--Si bonds related to both the irradiation time and the annealing time obviously affect the generation of the localized gap states of hole-net silicon, by which the production of stimulated emission through controlling oxidation time can be explained.

Key words: hole-net silicon, passivated bonds, localized gap states

中图分类号:  (Electronic structure of nanoscale materials and related systems)

  • 73.22.-f
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 61.72.Cc (Kinetics of defect formation and annealing) 78.55.Ap (Elemental semiconductors) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters) 78.45.+h (Stimulated emission)