中国物理B ›› 2001, Vol. 10 ›› Issue (13): 1-3.

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SINGLE-ELECTRON TRANSISTORS FOR FUTURE APPLICATIONS

李宏伟, 周均铭   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2001-01-01 修回日期:2001-02-06 出版日期:2001-12-25 发布日期:2005-07-07
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 69925410 and 19904015).

SINGLE-ELECTRON TRANSISTORS FOR FUTURE APPLICATIONS

Wang Tai-hong (李宏伟), Li Hong-wei (周均铭), Zhou Jun-ming   

  1. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2001-01-01 Revised:2001-02-06 Online:2001-12-25 Published:2005-07-07
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 69925410 and 19904015).

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摘要： Single electron transistors with wire channels are fabricated by a nanoelectrode-pair technique. Their characteristics strongly depend on the channel widths and the voltages on the in-plane gates. A few dips in the Coulomb blockade oscillations were observed at the less positive gate voltages for a device with a 70nm-wide wire due to Coulomb blockade between the coupled dots. By applying negative voltages to the in-plane gates, the oscillations became periodic, which indicated the formation of a single dot in the conducting channel. These gates facilitate fabricating single-electron transistors with single dot structures, which have potential applications on its integration.

Abstract: Single electron transistors with wire channels are fabricated by a nanoelectrode-pair technique. Their characteristics strongly depend on the channel widths and the voltages on the in-plane gates. A few dips in the Coulomb blockade oscillations were observed at the less positive gate voltages for a device with a 70nm-wide wire due to Coulomb blockade between the coupled dots. By applying negative voltages to the in-plane gates, the oscillations became periodic, which indicated the formation of a single dot in the conducting channel. These gates facilitate fabricating single-electron transistors with single dot structures, which have potential applications on its integration.

Key words: single-electron tunneling, Coulomb blockade, quantum dots

中图分类号: 

  • 7280E