中国物理B ›› 2000, Vol. 9 ›› Issue (10): 774-777.doi: 10.1088/1009-1963/9/10/011

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

AuPd CATALYTIC NANOPARTICLE SIZE EFFECT ON THE FORMATION OF AMORPHOUS SILICON NANOWIRES

刘祖琴, 孙连峰, 唐东升, 周维亚, 李玉宝, 邹小平, 王刚   

  1. Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2000-05-23 出版日期:2005-06-10 发布日期:2005-06-10
  • 基金资助:
    Project supported in part by the National Natural Science Foundation of China (Grant No. 19834080) and by the Laboratory of Advanced Materials, Tsinghua University, Beijing, China.

AuPd CATALYTIC NANOPARTICLE SIZE EFFECT ON THE FORMATION OF AMORPHOUS SILICON NANOWIRES

Liu Zu-qin (刘祖琴), Sun Lian-feng (孙连峰), Tang Dong-sheng (唐东升), Zhou Wei-ya (周维亚), Li Yu-bao (李玉宝), Zou Xiao-ping (邹小平), Wang Gang (王刚)   

  1. Institute of Physics, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2000-05-23 Online:2005-06-10 Published:2005-06-10
  • Supported by:
    Project supported in part by the National Natural Science Foundation of China (Grant No. 19834080) and by the Laboratory of Advanced Materials, Tsinghua University, Beijing, China.

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摘要： Amorphous silicon (a-Si) nanowires have been prepared on SiO2/Si substrates by AuPd nanoparticles / silane reaction method. Field-emission scanning electron microscopy and transmission electron microscopy were used to characterize the samples. The typical a-Si nanowires we obtained are of a uniform diameter about 20 nm and length up to several micrometers. The growth mechanism of the nanowires seems to be the vapor-liquid-solid mechanism. The catalytic particle size effect on the formation of the nanowires and the cause of forming amorphous state Si nanowires are discussed.

Abstract: Amorphous silicon (a-Si) nanowires have been prepared on SiO2/Si substrates by AuPd nanoparticles / silane reaction method. Field-emission scanning electron microscopy and transmission electron microscopy were used to characterize the samples. The typical a-Si nanowires we obtained are of a uniform diameter about 20 nm and length up to several micrometers. The growth mechanism of the nanowires seems to be the vapor-liquid-solid mechanism. The catalytic particle size effect on the formation of the nanowires and the cause of forming amorphous state Si nanowires are discussed.

Key words: chemical vapor deposition, nanowires, nanoparticles

中图分类号:  (Scanning electron microscopy (SEM) (including EBIC))

  • 68.37.Hk
68.37.Vj (Field emission and field-ion microscopy) 81.07.Vb (Quantum wires) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)