中国物理B ›› 1994, Vol. 3 ›› Issue (5): 384-389.doi: 10.1088/1004-423X/3/5/009

• • 上一篇    

WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GaAs/AlGaAs QUANTUM WELLS

罗晋生1, 徐仲英2, 罗昌平2, 许继宗2, 郑宝真2, 金世荣3   

  1. (1)Department of Electronic Engineering, Xi'an Jiaotong University, Xi'an 710049, China; (2)State Key Laboratory of superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China; (3)State Key Laboratory of superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China;Department of Electronic Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 收稿日期:1993-05-24 出版日期:1994-05-20 发布日期:1994-05-20

WELL-WIDTH DEPENDENCE OF THE EXCITON LIFETIME IN GaAs/AlGaAs QUANTUM WELLS

JIN SHI-RONG (金世荣)ab, XU ZHONG-YING (徐仲英)a, LUO JIN-SHENG (罗晋生)b, LUO CHANG-PING (罗昌平)b, XU JI-ZONG (许继宗)b, ZHENG BAO-ZHEN (郑宝真)b   

  1. a State Key Laboratory of superlattices and Microstructures, Institute of Semiconductors, Academia Sinica, Beijing 100083, China; b Department of Electronic Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:1993-05-24 Online:1994-05-20 Published:1994-05-20

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摘要： The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly linear decrease of the lifetime with decreasing well width. However, when the well is further decreased, a saturation and even increase of the lifetime with decreeing well width are observed. The experimental data are compared with the theory of radiative excitonic recombination, and show that well width dependence of the measured photoluminescence lifetime can be attributed mainly to the change of the excitonic effective volume and the overlap integral as well.

Abstract: The dependence of the excitonic lifetime on the well width has been studied in conventional GaAs/AlGaAs quantum wells. Two clearly different variations of the measured excitonic lifetime have been observed. For wide well widths, we find a nearly linear decrease of the lifetime with decreasing well width. However, when the well is further decreased, a saturation and even increase of the lifetime with decreeing well width are observed. The experimental data are compared with the theory of radiative excitonic recombination, and show that well width dependence of the measured photoluminescence lifetime can be attributed mainly to the change of the excitonic effective volume and the overlap integral as well.

中图分类号:  (Excitons and related phenomena)

  • 71.35.-y
73.21.Fg (Quantum wells) 73.63.Hs (Quantum wells) 78.67.De (Quantum wells) 78.55.Cr (III-V semiconductors)