中国物理B ›› 1996, Vol. 5 ›› Issue (8): 590-600.doi: 10.1088/1004-423X/5/8/004

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION

班大雁1, 杨风源1, 方容川1, 徐世宏2, 徐鹏寿2   

  1. (1)Department of Physics, University of Science and Technology of China, Hefei 230026, China; (2)National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
  • 收稿日期:1995-05-17 出版日期:1996-08-20 发布日期:1996-08-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China.

INTERFACE FORMATION OF Ge/ZnSe(100) AND Ge/ZnS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON RADIATION PHOTOEMISSION

BAN DA-YAN (班大雁)a, YANG FENG-YUAN (杨风源)a, FANG RONG-CHUAN (方容川)a, XU SHI-HONG (徐世宏)b, XU PENG-SHOU (徐鹏寿)b   

  1. a Department of Physics, University of Science and Technology of China, Hefei 230026, China; b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
  • Received:1995-05-17 Online:1996-08-20 Published:1996-08-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China.

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摘要： The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces.

Abstract: The microscopic evolution of interface formation between Ge and Ⅱ-Ⅵ compounds such as ZnSe and ZnS single crystals has been studied by synchrotron radiation photoemission spectroscopy and low energy electron diffraction. Core level intensity measurements from the substrate as well as from the overlayer show a nearly ideal two-dimensional growth mode for the deposition of Ge on ZnSe(100) surface. How-ever, there is a certain deviation from the ideal two-dimensional mode in the case of Ge/ZnS(111) due to the diffusion of substrate atoms into Ge overlayer. Surface semi-tire core level spectra indicate that the reaction of Ge with S atoms at Ge/ZnS(111) interfaces is much stronger than that of Ge with Se atoms at Ge/ZnSe(100) interfaces.

中图分类号:  (Diffusion; interface formation)

  • 68.35.Fx
79.60.Jv (Interfaces; heterostructures; nanostructures) 79.60.Bm (Clean metal, semiconductor, and insulator surfaces) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)