Preparation of Ga<sub>2</sub>O<sub>3</sub> thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Preparation of Ga₂O₃ thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Lu Y M^†, Li C, Chen X H, Han S, Cao P J, Jia F, Zeng Y X, Liu X K, Xu W Y, Liu W J, Zhu D L

(a) Diagram of β-Ga₂O₃ unit cell, and the atomic arrangement of (400) and ( 4 ¯ 02 ) planes; (b) diagram of α-Ga₂O₃ unit cell, and the atomic arrangement of the (110) plane.