A facile and efficient dry transfer technique for two-dimensional Van derWaals heterostructure

Xie Li^{1, 2}, Du Luojun¹, Lu Xiaobo^{1, 2}, Yang Rong^{1, 2, †}, Shi Dongxia^{1, 2}, Zhang Guangyu^{1, 2, 3, 4, ‡}

(color online) Invertor made from the p-BN/MoS /BN heterostructure. (a) OM image of the invertor based on p-BN/MoS /BN heterostructure in Fig. 4(e) (the fuchsia dotted area indicates the MoS flake). (b) Schematic diagram of the invertor in panel (a). (c) Left axis: typical transfer characteristic curve (@ bias voltage of 1 V) of the MoS channel in the invertor in panel (b). Right axis: corresponding leakage currents in the transfer characteristic measurement. (d) Output voltages as a function of input voltages. Inset is the schematic drawing of the electronic circuit. (e) -dependence of the invert gain.