Molecular dynamics simulation of structural change at metal/semiconductor interface induced by nanoindenter

Zhao Bing-Bing^{1, 2}, Wang Ying^{1, 2}, Liu Chang^{1, 2}, Wang Xiao-Chun^{1, 2, †,}

The radial distribution functions for the nanoindentation depth 20 Å with different incident angles ((a)–(k)).