Molecular dynamics simulation of structural change at metal/semiconductor interface induced by nanoindenter

Zhao Bing-Bing^{1, 2}, Wang Ying^{1, 2}, Liu Chang^{1, 2}, Wang Xiao-Chun^{1, 2, †,}

The stress distributions of each atom under the nanoindenter with different incident angles ((a) −80°, (b) −70°, (c) −60°, (d) −45°, (e) −30°, and (f) 0°) and different nanoindentation depths ((a1) 10 Å, (a2) 15 Å, (a3) 20 Å).