Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Wang Hao¹, Han Wei-Hua^{1, †,}, Zhao Xiao-Song¹, Zhang Wang¹, Lyu Qi-Feng¹, Ma Liu-Hong^{1, 2}, Yang Fu-Hua^{1, 2, ‡,}

(a) I_ds–V_g of the JNT in a temperature range from 10 K to 250 K at V_ds = 5 mV. (b) Drain current curve and corresponding transconductance curve with V_ds = 5 mV at 10 K.