Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
Duan Xiao-Ling, Zhang Jin-Cheng†, , Xiao Ming, Zhao Yi, Ning Jing, Hao Yue
       

Energy band diagram and electron density (a) underneath the gate region (polar AlGaN/GaN) and (b) on the sidewall of the groove (nonpolar AlGaN/GaN) with Vg = 0 V and 4 V at Vd = 0 V.