Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing

Ma Liu-Hong, Han Wei-Hua^†,, Wang Hao, Lyu Qi-feng, Zhang Wang, Yang Xiang, Yang Fu-Hua^‡,

(a) Plots of measured I_DS versus V_GS at different temperatures (10 K, 20 K, 50 K, 100 K, 150 K, 200 K, 250 K, and 300 K) and V_DS = 10 mV. The insert shows thermal broadening functions^[15] at 10 K and 50 K. The energy distribution of electrons at 10 K is significantly narrower. (b) Conductance and transconductance characteristics of JNT measured at 10 K with V_DS = 10 mV.