Modulation of physical properties of oxide thin films by multiple fields

Yang Hua-Li^{1, 2}, Wang Bao-Min^{1, 2, †,}, Zhu Xiao-Jian^{1, 2}, Shang Jie^{1, 2}, Chen Bin^{1, 2}, Li Run-Wei^{1, 2, ‡,}

(a) Temperature dependence of resistance for the LCMO (111) film in the magnetic fields as stated when the ferroelectric substrate was in the and states, respectively. Inset in panel (a): ΔR/R of the film as a function of E at T = 260 K. (b) Nonvolatile resistance switching of the LCMO film by a pulsed electric field at T = 260 K. (c) and (d) Schematics of the ferroelastic strain effect at T = 260 K. (e) and (f) XRD θ–2θ scans for the ferroelectric substrate and LCMO film when the ferroelectric substrate was in the and states, respectively.^[169]