High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
He Ze-Zhao1, 2, Yang Ke-Wu1, 2, Yu Cui2, Liu Qing-Bin2, Wang Jing-Jing2, Li Jia2, Lu Wei-Li2, Feng Zhi-Hong2, †, , Cai Shu-Jun2
       

(a) IDS–VDS characteristics of GFET for 0 hour and 5 hour 35 min latter under 200 °C in ambient. (b) The maximum IDS and gm versus time.