Effects of grinding-induced grain boundary and interfaces on electrical transportation and structure phase transition in ZnSe under high pressure
Yang Jie1, 2, Wang Pei1, 2, Zhang Guo-Zhao2, Zhou Xiao-Xue2, Li Jing3, †, 
, Liu Cai-Long2, ‡,
, Liu Cai-Long2, ‡, Complex impedance planes of ZnSe with an average grain size of about 859 nm at pressures of (a) 1.2 GPa–4.0 GPa, (b) 4.0 GPa–8.2 GPa, (c) 8.9 GPa–11.6 GPa, and (d) 12.2 GPa–13.1 GPa.
