Properties of n-Ge epilayer on Si substrate with
Huang Shi-Hao1, †, 
, Li Cheng2, Chen Cheng-Zhao3, Wang Chen2, Xie Wen-Ming1, Lin Shu-Yi1, Shao Ming1, Nie Ming-Xing1, Chen Cai-Yun1
, Li Cheng2, Chen Cheng-Zhao3, Wang Chen2, Xie Wen-Ming1, Lin Shu-Yi1, Shao Ming1, Nie Ming-Xing1, Chen Cai-Yun1 Typical SIMS depth profiles of the n-Ge epilayers on Si substrate with doping concentrations of 2.6 × 1018 cm−3 and 6.7 × 1018 cm−3, respectively.
