A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology
Li Ou-Peng1, †, 
, Zhang Yong1, Xu Rui-Min1, Cheng Wei2, Wang Yuan2, Niu Bing2, Lu Hai-Yan2
, Zhang Yong1, Xu Rui-Min1, Cheng Wei2, Wang Yuan2, Niu Bing2, Lu Hai-Yan2 Cross-section of the InP DHBT process with interconnect layers formed by BCB.
