A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Li Ou-Peng^{1, †,}, Zhang Yong¹, Xu Rui-Min¹, Cheng Wei², Wang Yuan², Niu Bing², Lu Hai-Yan²

DC characteristics of the InGaAs/InP DHBT: (a) gammel plot I_b (left) and current gain β (right) at V_cb = 0 V; (b) I–V characteristics (left) and BV_CEO measurement (right).