Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot
Jbara Ahmed S1, 2, 3, Othaman Zulkafli1, 3, †, 
, Saeed M A3
, Saeed M A3 Cross sections of s- and p-states for In0.6Ga0.4N/GaN envelope function with 20 nm diameter, 2 nm WL and different QD heights: (a) 4 nm, (b) 8 nm, and (c) 12 nm.
