Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC
Liang Feng1, Chen Ping1, †, 
, Zhao De-Gang1, Jiang De-Sheng1, Zhao Zhi-Juan2, Liu Zong-Shun1, Zhu Jian-Jun1, Yang Jing1, Liu Wei1, He Xiao-Guang1, Li Xiao-Jing1, Li Xiang1, Liu Shuang-Tao1, Yang Hui3, Zhang Li-Qun3, Liu Jian-Ping3, Zhang Yuan-Tao4, Du Guo-Tong4
, Zhao De-Gang1, Jiang De-Sheng1, Zhao Zhi-Juan2, Liu Zong-Shun1, Zhu Jian-Jun1, Yang Jing1, Liu Wei1, He Xiao-Guang1, Li Xiao-Jing1, Li Xiang1, Liu Shuang-Tao1, Yang Hui3, Zhang Li-Qun3, Liu Jian-Ping3, Zhang Yuan-Tao4, Du Guo-Tong4 The SECO (a) and VBM (b) of AlN film samples with thicknesses of 50 nm, 200 nm, and 400 nm. The lines and triangular symbols present the fitting curves and UPS data, respectively.
