Contact resistance asymmetry of amorphous indium–gallium–zinc–oxide thin-film transistors by scanning Kelvin probe microscopy
Wu Chen-Fei1, 2, Chen Yun-Feng1, 2, Lu Hai1, 2, †, 
, Huang Xiao-Ming3, Ren Fang-Fang1, 2, Chen Dun-Jun1, 2, Zhang Rong1, 2, Zheng You-Dou1, 2
, Huang Xiao-Ming3, Ren Fang-Fang1, 2, Chen Dun-Jun1, 2, Zhang Rong1, 2, Zheng You-Dou1, 2 Schematic energy band diagrams near the Ti and a-IGZO interface: (a) for separated system; (b) for contact without bias voltage; (c) for source contact where a reverse bias is applied, and (d) for drain contact where a forward bias is applied.
