Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
Liu Yang1, †, 
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2 Distributions of electric field at (a) 0.25 ns (b) 35.25 ns (c) 50.25 ns, and (d) 66.25 ns.
