Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave
Liu Yang1, †, 
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2
, Chai Chang-Chun1, Yang Yin-Tang1, Sun Jing2, Li Zhi-Peng2 Variations of of current density at gate (black), source (blue), and drain (red) electrode with time.
