Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer
Ma Da1, Luo Xiao-Rong1, 2, †, 
, Wei Jie1, Tan Qiao1, Zhou Kun1, Wu Jun-Feng1
, Wei Jie1, Tan Qiao1, Zhou Kun1, Wu Jun-Feng1 Electric field distributions in the n-pillar and p-pillar for the CEA-VDMOS.
