Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer
Ma Da1, Luo Xiao-Rong1, 2, †, , Wei Jie1, Tan Qiao1, Zhou Kun1, Wu Jun-Feng1
       

(a) Schematic cross-sectional view of the proposed CEA-VDMOS, (b) accumulation effect in on-state (VGS > Vth, VGD > 0, VDS > 0), (c) assisted-depletion effect on the n-pillar in the off-state, and (d) schematic cross-sectional view of the CSJ-VDMOS.