Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction
Yang Pan, Chen Wen-Jie, Wang Jiao, Yan Zhao-Wen, Qiao Jian-Li, Xiao Tong, Wang Xin, Pang Zheng-Peng, Yang Jian-Hong†,
       

The spatial distributions of space-charge region with different conditions: (a) with positive magnetic field and negative gate voltage; (b) with positive magnetic field and gate voltage; (c) with negative magnetic field and negative gate voltage; (d) with negative magnetic field and positive gate voltage. The qvB is the Lorentz force and qEe is the electric field force.