Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction
Yang Pan, Chen Wen-Jie, Wang Jiao, Yan Zhao-Wen, Qiao Jian-Li, Xiao Tong, Wang Xin, Pang Zheng-Peng, Yang Jian-Hong†,
       

I–V characteristics of the p–n junction at T = 300 K for various magnetic fields. The inset demonstrates MR at Vbias = 0.9 V.