Potential profiles in the full depletion region along x = 0 (see Fig. 1(b)) each as a function of front gate voltage for (a) wide JL SOI FinFET (W_fin = 100 nm) and (b) a narrow JL SOI FinFET (W_fin = 9 nm). N_D = 10¹⁹ cm⁻³, T_si = 9 nm, V_D = 0.05 V, and V_BG = 0 V. y = −T_si/2 is at the top of the film and y = T_si/2 is at the BOX interface.