An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect
Liu Fan-Yu1, †, , Liu Heng-Zhu1, Liu Bi-Wei1, Guo Yu-Feng2
       

Effects of (a) fin width and (b) film thickness on thin JL SOI FinFET. ND = 1019 cm−3, VD = 0.05 V, and VBG = 0 V.